US 2020/0402822 A1 · PLASMA PROCESSING APPARATUS

Abstract

Disclosed is a plasma processing device that provides an object to be treated with plasma treatment. A wafer as an object to be treated, which is attached on the upper surface of adhesive sheet held by a holder frame, is mounted on a stage. In a vacuum chamber that covers the stage therein, plasma is generated, by which the wafer mounted on the stage undergoes plasma treatment. The plasma processing device contains a cover member made of dielectric material. During the plasma treatment on the wafer, the holder frame is covered with a cover member placed at a predetermined position above the stage, at the same time, the wafer is exposed from an opening formed in the center of the cover member.

Claims12

Dependent claims

A method for plasma processing a wafer, the method comprising:

providing a work piece, the work piece having a wafer, a holding sheet and a frame, the frame holding the holding sheet, the holding sheet holding the wafer;
providing a plasma processing apparatus, the plasma processing apparatus having a chamber, an electrode for generating plasma, a stage above which the work piece is placed, a cover member, and a carrier tool for loading the work piece to the stage, the cover member having an opening that exposes the wafer loaded above the stage in plan view;
loading the work piece to the stage by using the carrier tool, such that the carrier tool supports a portion of the work piece overlapped by the frame without making contact with the wafer;
generating plasma by the electrode;
and
plasma-processing the wafer by the generated plasma.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

17/013,325Filed 4 Sep 2020

Priority

30 Mar 2010

Published

24 Dec 2020

Term ends

Not estimatedThe source records don’t support an estimate.

Classification12 codes

H10P 72/0421
For etching: for drying etching
H01J 37/32623
Constructional details of the reactor: mechanical discharge control means
H01J 37/32642
Mechanical discharge control means: focus rings
H10P 50/242
Of semiconductor materials: of Group IV materials

Family

Application12/680,817Continuation · filed 30 Mar 2010

Application13/938,347Division · filed 10 Jul 2013

Application15/188,630Division · filed 21 Jun 2016

Application15/804,968Continuation · filed 6 Nov 2017

Application17/013,325Continuation

Application15/804,968Division

Application13/938,347Continuation

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