Semiconductor device and method of fabricating the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsAlexander KALNITSKY, Wei-Cheng WU, Harry-Hak-Lay CHUANG
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Abstract
A semiconductor device includes a substrate, a first well, a second well, a metal gate, a poly gate, a source region, and a drain region. The first well and the second well are within the substrate. The metal gate is partially over the first well. The poly gate is over the second well. The poly gate is separated from the metal gate, and a width ratio of the poly gate to the metal gate is in a range from about 0.1 to about 0.2. The source region and the drain region are respectively within the first well and the second well.
Claims20
A semiconductor device, comprising:
- a substrate;
- a first well and a second well within the substrate;
- a metal gate partially over the first well;
- a poly gate over the second well, wherein the poly gate is separated from the metal gate, and a width ratio of the poly gate to the metal gate is in a range from about 0.1 to about 0.2;
- and
- a source region and a drain region respectively within the first well and the second well.
A semiconductor device, comprising:
- a substrate;
- two first wells and a second well within the substrate, wherein the second well is between the two first wells;
- a first metal gate partially over one of the two first wells;
- a second metal gate partially over the other of the two first wells;
- a first poly gate and a second poly gate over the second well, wherein the first poly gate is separated from the second poly gate;
- and
- a source region and a drain region respectively within the one of the two first wells and the second well.
A method of fabricating a semiconductor device, comprising:
- forming a first well and a second well in a substrate, wherein the first well and the second well are doped with different types of dopants;
- forming a dummy gate partially over the first well and partially over the second well, wherein the dummy gate comprises a dummy gate stack;
- forming a poly gate over the second well, wherein the poly gate comprises a poly gate stack, and a gap is between the dummy gate and the poly gate;
- forming a source region and a drain region respectively in the first well and the second well, wherein the source region and the drain region are doped with a same type of dopants;
- and
- replacing the dummy gate stack with a metal gate stack.
Dependencies are inferred from the claim text.