Features for Improving Process Uniformity in a Millisecond Anneal System

A process for thermally treating a substrate in a millisecond anneal system, comprising:

• obtaining data indicative of a temperature profile associated with one or more substrates during processing in a millisecond anneal system, the millisecond anneal system having a wafer plane plate dividing the processing chamber into a top chamber and a bottom chamber;
• adjusting a shape, configuration, or position of one or more of an edge reflector or a wedge reflector in the millisecond anneal system based at least in part on the temperature profile.

A process for thermally treating a substrate in a millisecond anneal system, comprising:

• obtaining data indicative of a temperature profile associated with one or more substrates during processing in a millisecond anneal system, the millisecond anneal system having a wafer plane plate dividing the processing chamber into a top chamber and a bottom chamber, the wafer plane plate comprising a non-rotating substrate support;
• determining an angular location for placement of a device substrate in a processing chamber of the millisecond anneal system, the angular position determined based at least in part on the temperature profile.