Plasma processing apparatus and plasma processing method

A plasma processing apparatus, comprising:

• a processing chamber in which a sample is subjected to plasma processing;
• a first radio frequency power source configured to supply a first radio frequency power for generating a plasma;
• a sample stage on which the sample is placed;
• a second radio frequency power source configured to supply a second radio frequency power to the sample stage;
• and
• a control device configured to control, when the second radio frequency power source is controlled based on a change in a plasma impedance, which is generated when a first gas that is a gas for a first step is switched to a second gas that is a gas for a second step, such that the second radio frequency power is changed from a value of the second radio frequency power in the first step to a value of the second radio frequency power in the second step, a supply time of the first gas by using a first time and a second time such that a supply time of the second radio frequency power in the first step is substantially equal to a time of the first step, wherein
• the first step and the second step are steps of plasma processing conditions,
• the first time is a time period from a start time of the first step to a start time of a supply of the first gas, and
• the second time is a time period from a finish time of the first step to a finish time of the supply of the first gas.

A plasma processing apparatus, comprising:

• a processing chamber in which a sample is subjected to plasma processing;
• a first radio frequency power source configured to supply a first radio frequency power for generating a plasma;
• a sample stage on which the sample is placed;
• a second radio frequency power source configured to supply a second radio frequency power to the sample stage;
• and
• a control device configured to control, when the first radio frequency power source is controlled based on a change in a plasma impedance, which is generated when a first gas that is a gas for a first step is switched to a second gas that is a gas for a second step, such that the first radio frequency power is changed from a value of the first radio frequency power in the first step to a value of the first radio frequency power in the second step, a supply time of the second gas by using a first time and a second time such that a supply time of the first radio frequency power in the second step is substantially equal to a time of the second step, wherein
• the first step and the second step are steps of plasma processing conditions,
• the first time is a time period from a start time of the first step to a start time of a supply of the first gas, and
• the second time is a time period from a finish time of the first step to a finish time of the supply of the first gas.

A plasma processing apparatus, comprising:

• a processing chamber in which a sample is subjected to plasma processing;
• a first radio frequency power source configured to supply a first radio frequency power for generating a plasma;
• a sample stage on which the sample is placed;
• a second radio frequency power source configured to supply a second radio frequency power to the sample stage;
• and
• a control device configured to control, when the second radio frequency power source is controlled based on a change in a plasma impedance, which is generated when a first gas that is a gas for a first step is switched to a second gas that is a gas for a second step, such that the second radio frequency power is changed from a value of the second radio frequency power in the first step to a value of the second radio frequency power in the second step, a supply time of the second gas by using a first time and a second time such that a supply time of the second radio frequency power in the second step is substantially equal to a time of the second step, wherein
• the first step and the second step are steps of plasma processing conditions,
• the first time is a time period from a start time of the first step to a start time of a supply of the first gas, and
• the second time is a time period from a finish time of the first step to a finish time of the supply of the first gas.

A plasma processing method in which a plasma processing apparatus is used,

• the plasma processing apparatus including:
• a processing chamber in which a sample is subjected to plasma processing;
• a first radio frequency power source configured to supply a first radio frequency power for generating a plasma;
• a sample stage on which the sample is placed;
• and
• a second radio frequency power source configured to supply a second radio frequency power to the sample stage,
• the plasma processing method comprising:
• controlling, when the first radio frequency power source is controlled based on a change in a plasma impedance, which is generated when a first gas that is a gas for a first step is switched to a second gas that is a gas for a second step, such that the first radio frequency power is changed from a value of the first radio frequency power in the first step to a value of the first radio frequency power in the second step, a supply time of the first gas by using a first time and a second time such that a supply time of the first radio frequency power in the first step is substantially equal to a time of the first step, wherein
• the first step and the second step are steps of plasma processing conditions,
• the first time is a time period from a start time of the first step to a start time of a supply of the first gas, and
• the second time is a time period from a finish time of the first step to a finish time of the supply of the first gas.

A plasma processing method in which a plasma processing apparatus is used,

• the plasma processing apparatus including:
• a processing chamber in which a sample is subjected to plasma processing;
• a first radio frequency power source configured to supply a first radio frequency power for generating a plasma;
• a sample stage on which the sample is placed;
• and
• a second radio frequency power source configured to supply a second radio frequency power to the sample stage,
• the plasma processing method comprising:
• controlling, when the second radio frequency power source is controlled based on a change in a plasma impedance, which is generated when a first gas that is a gas for a first step is switched to a second gas that is a gas for a second step, such that the second radio frequency power is changed from a value of the second radio frequency power in the first step to a value of the second radio frequency power in the second step, a supply time of the first gas by using a first time and a second time such that a supply time of the second radio frequency power in the first step is substantially equal to a time of the first step, wherein
• the first step and the second step are steps of plasma processing conditions,
• the first time is a time period from a start time of the first step to a start time of a supply of the first gas, and
• the second time is a time period from a finish time of the first step to a finish time of the supply of the first gas.

A plasma processing method in which a plasma processing apparatus is used,

• the plasma processing apparatus including:
• a processing chamber in which a sample is subjected to plasma processing;
• a first radio frequency power source configured to supply a first radio frequency power for generating a plasma;
• a sample stage on which the sample is placed;
• and
• a second radio frequency power source configured to supply a second radio frequency power to the sample stage,
• the plasma processing method comprising:
• controlling, when the first radio frequency power source is controlled based on a change in a plasma impedance, which is generated when a first gas that is a gas for a first step is switched to a second gas that is a gas for a second step, such that the first radio frequency power is changed from a value of the first radio frequency power in the first step to a value of the first radio frequency power in the second step, a supply time of the second gas by using a first time and a second time such that a supply time of the first radio frequency power in the second step is substantially equal to a time of the second step, wherein
• the first step and the second step are steps of plasma processing conditions,
• the first time is a time period from a start time of the first step to a start time of a supply of the first gas, and
• the second time is a time period from a finish time of the first step to a finish time of the supply of the first gas.

A plasma processing method in which a plasma processing apparatus is used,

• the plasma processing apparatus including:
• a processing chamber in which a sample is subjected to plasma processing;
• a first radio frequency power source configured to supply a first radio frequency power for generating a plasma;
• a sample stage on which the sample is placed;
• and
• a second radio frequency power source configured to supply a second radio frequency power to the sample stage,
• the plasma processing method comprising:
• controlling, when the second radio frequency power source is controlled based on a change in a plasma impedance, which is generated when a first gas that is a gas for a first step is switched to a second gas that is a gas for a second step, such that the second radio frequency power is changed from a value of the second radio frequency power in the first step to a value of the second radio frequency power in the second step, a supply time of the second gas by using a first time and a second time such that a supply time of the second radio frequency power in the second step is substantially equal to a time of the second step, wherein
• the first step and the second step are steps of plasma processing conditions,
• the first time is a time period from a start time of the first step to a start time of a supply of the first gas, and
• the second time is a time period from a finish time of the first step to a finish time of the supply of the first gas.