Method for manufacturing semiconductor structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsNAI-HAN CHENG, CHI-MING YANG
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Abstract
In some embodiments of the present disclosure, a method of manufacturing a semiconductor structure includes providing a substrate including a first atom and a second atom; forming a compound over the substrate by bonding the first atom with a ionized etchant; and removing the compound from the substrate by bombarding the compounds with a charged particle having a bombarding energy smaller than a bonding energy between the first atom and the second atom, wherein the charged particle and the ionized etchant include different ions.
Claims20
A method for manufacturing a semiconductor structure, comprising:
- providing a substrate comprising a first atom and a second atom, wherein the first atom is over the second atom;
- forming a compound over the substrate by bonding the first atom with a ionized etchant;
- and
- removing the compound from the substrate by bombarding the compounds with a charged particle having a bombarding energy smaller than a bonding energy between the first atom and the second atom, wherein the charged particle and the ionized etchant comprise different ions.
A method for manufacturing a semiconductor structure, comprising:
- providing a substrate comprising a plurality of first atoms in an outermost layer and a plurality of second atoms in an inner layer;
- forming a plurality of compounds over the inner layer of the substrate by bonding the plurality of first atoms with a plurality of ionized atoms;
- and
- removing the plurality of compounds from the inner layer of the substrate by bombarding the plurality of compounds with a plurality of charged particles having a bombarding energy smaller than a bonding energy between each of the plurality of second atoms.
A method for manufacturing a semiconductor structure, comprising:
- providing a substrate comprising a plurality of first atoms in an outermost layer and a plurality of second atoms in an inner layer;
- disposing a patterned photo resist layer over the substrate;
- bonding the plurality of first atoms exposed through the patterned photo resist layer with an ionized etchant to form a plurality of compounds over the inner layer of the substrate;
- and
- removing the compounds from the inner layer of the substrate to form a plurality of trenches by bombarding the plurality of compounds with a plurality of charged particles having a bombarding energy smaller than a bonding energy between each of the plurality of second atoms.
Dependencies are inferred from the claim text.