Plasma processing method and plasma processing apparatus
AssigneeTokyo Electron Limited
InventorsYusuke AOKI, Toshikatsu TOBANA, Fumiya TAKATA, Shinya MORIKITA, Kazunobu FUJIWARA, Jun ABE, Koichi NAGAMI
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AssigneeTokyo Electron Limited
InventorsYusuke AOKI, Toshikatsu TOBANA, Fumiya TAKATA, Shinya MORIKITA, Kazunobu FUJIWARA, Jun ABE, Koichi NAGAMI
Estimating the term…
A plasma processing method according to an exemplary embodiment includes generating plasma from a film formation gas in a chamber of a plasma processing apparatus by supplying radio frequency power from a radio frequency power source. The plasma processing method further includes forming a protective film on an inner wall surface of a side wall of the chamber by depositing a chemical species from the plasma on the inner wall surface. In the forming a protective film, a pulsed negative direct-current voltage is periodically applied from a direct-current power source device to an upper electrode of the plasma processing apparatus.
A plasma processing method performed using a plasma processing apparatus, wherein the plasma processing apparatus includes:
A plasma processing apparatus comprising:
Dependencies are inferred from the claim text.