Semiconductor structure having sets of iii-v compound layers and method of forming

A method of forming a semiconductor structure, the method comprising:

• depositing a first III-V layer having a first-type dopant over a substrate;
• depositing a plurality of pairs of layers over the first III-V layer until a predetermined number of pairs is deposited, wherein each pair of layers of the plurality of pairs of layers includes a lower III-V compound layer and an upper III-V compound layer, the lower III-V compound layer is undoped or has a second doping type, and the upper III-V compound layer has the first-type dopant;
• forming a second III-V compound layer over an upper-most layer of the plurality of pairs of layers, wherein the second III-V compound layer is undoped;
• forming an active layer over the second III-V compound layer;
• and
• depositing a dielectric layer over the active layer.

A semiconductor structure, comprising:

• a substrate;
• a first III-V layer over the substrate, the first III-V layer having P-type doping;
• a second III-V layer over the first III-V layer, wherein the second III-V layer is undoped;
• a third III-V layer over the second III-V layer, wherein the third III-V layer is P-type doped;
• a fourth III-V layer over the third III-V layer, the fourth III-V layer being undoped;
• an active layer over the fourth III-V layer;
• and
• a dielectric layer directly contacting the active layer.