Stage and plasma processing apparatus

A plasma processing apparatus comprising:

• a first radio-frequency power supply configured to apply a radio-frequency power for plasma generation;
• a second power supply and a third power supply each configured to apply a bias power for ion attraction;
• an electrostatic chuck configured to support a substrate and an edge ring;
• and
• a base configured to support the electrostatic chuck,
• wherein the electrostatic chuck includes:
• a first region having a first upper surface and configured to support the substrate placed on the first upper surface;
• a second region having a second upper surface, provided integrally around the first region, and configured to support the edge ring placed on the second upper surface;
• a first electrode provided in the first region and configured to apply a DC voltage;
• a second electrode provided in the second region and configured to apply a DC voltage;
• and
• a third electrode configured to apply a bias power.