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US 2020/0402773 A1Published application
Member for use in plasma processing device, and plasma processing device provided therewith
AssigneesKYOCERA Corporation, Toshiba Materials Co., Ltd.
InventorsKazuhiro ISHIKAWA, Takashi HINO, Shuichi SAITO
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Abstract
A member for use in a plasma processing device of the disclosure includes a base material, and a film of an oxide of a rare earth element on at least a part of the base material. A coefficient of variation of thickness of the film is 0.04 or less. A plasma processing device of the disclosure includes the member for use in a plasma processing device. In the member for use in a plasma processing device according to the disclosure, variation in film thickness is small.
Claims8
A member for use in a plasma processing device, comprising:
- a base material;
- and
- a film of an oxide of a rare earth element on at least a part of the base material,
- a coefficient of variation of thickness of the film being 0.04 or less.
1 more element
Dependencies are inferred from the claim text.