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US 2020/0402771 A1Published application
Member for use in plasma processing device, and plasma processing device provided therewith
AssigneesKYOCERA Corporation, Toshiba Materials Co., Ltd.
InventorsKazuhiro ISHIKAWA, Takashi HINO, Shuichi SAITO
Life of this patent
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Abstract
A member for use in a plasma processing device of the disclosure includes a base material and a film containing yttrium oxide as a main component on the base material. An area occupancy of closed pores of the film is 0.2 area % or less, and a full width at half maximum of a diffraction peak on a (222) plane of yttrium oxide obtained by X-ray diffraction of the film is 0.25° or less. A plasma processing device according to the disclosure includes the member for use in a plasma processing device.
Claims6
A member for use in a plasma processing device, comprising:
- a base material;
- and
- a film comprising yttrium oxide as a main component on at least a part of the base material,
- an area occupancy of closed pores of the film being 0.2 area % or less, and
- a full width at half maximum of a diffraction peak on a (222) plane of yttrium oxide obtained by X-ray diffraction of the film being 0.25° or less.
2 more elements
Dependencies are inferred from the claim text.