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AssigneeSK hynix Inc.
InventorsMoo Hui PARK, Seok Joon KANG, Jun Ho CHEON
Estimating the term…
A nonvolatile memory apparatus may include a memory cell, a bit line control circuit, and a word line control circuit. The memory cell may be coupled between a global bit line and a global word line. During a read operation, the bit line control circuit may provide a first high voltage to the global bit line and provide a second high voltage to the global bit line when snapback of the memory cell occurs. During the read operation, the word line control circuit may provide a second read supply voltage to the global word line and provide an anneal supply voltage to the global word line when snapback of the memory cell occurs.
A nonvolatile memory apparatus comprising:
An operation method of a nonvolatile memory apparatus, the method comprising:
Dependencies are inferred from the claim text.