Data storage control device and data storage control system

A data storage control system comprising a plurality of data storage control devices that are mutually communicable and each configured to write data into a first memory that is a non-volatile memory, each of the plurality of data storage control devices comprising:

• a second memory that is different from the first memory;
• a memory controller configured to execute a writing process of writing the data from the second memory into the first memory on a block-by-block basis with a predetermined data size;
• an information receipt unit configured to receive voltage-related information that relates to an output voltage of a power supply device from a power source control device that supplies an operating voltage to the data storage control device by use of the output voltage of the power supply device;
• and
• a condition determination unit configured to, using the received voltage-related information, determine whether a predetermined voltage condition is satisfied, the voltage condition being that the output voltage specified based on the voltage-related information becomes lower than a first threshold voltage that is a predetermined threshold voltage within a predetermined voltage range that is predetermined as a normal voltage range of the operating voltage, the predetermined threshold voltage being higher than a lower limit-corresponding voltage corresponding to a lower limit voltage in the predetermined voltage range,
• wherein the data block stored in the first memory includes data stored in the second memory and a validity flag that indicates validity of the data, and
• the memory controller is configured to:
• in response to the condition determination unit determining that the voltage condition is satisfied during execution of the writing process, determine whether a predetermined storage condition is satisfied, the storage condition being that residual data yet to be written in a currently written block that is currently being written is estimated to be writable into the first memory by the time when the output voltage becomes lower than the lower limit-corresponding voltage;
• in response to determining that the storage condition is not satisfied, execute a first response process of withdrawing writing the residual data into the first memory but setting the validity flag corresponding to the currently written block as invalid;
• and
• in response to determining that the storage condition is satisfied, execute a second response process of writing the residual data yet to be written from the currently written block into the first memory,
• wherein the plurality of data storage control devices include a first device configured to execute a second predetermined process of transmitting a predetermined type of base data and a second device configured to use the base data received from the first device to execute a first predetermined process different from the writing process, the first response process, and the second response process, and
• the first threshold voltage in the second device is lower than the first threshold voltage in the first device.