Device design for short-circuit protection of transistors

A transistor semiconductor die comprising:

• a first current terminal and a second current terminal;
• a control terminal;
• and
• a semiconductor structure between the first current terminal, the second current terminal, and the control terminal, the semiconductor structure configured such that a resistance between the first current terminal and the second current terminal is based on a control signal provided at the control terminal, an on-state resistance of the transistor semiconductor die is less than 3.0 mΩ/cm2, a blocking voltage of the transistor semiconductor die is greater than 600V, and a short circuit withstand time of the transistor semiconductor die is greater than 3 μs.

A transistor semiconductor die comprising:

• a first current terminal and a second current terminal;
• a control terminal;
• a semiconductor structure between the first current terminal, the second current terminal, and the control terminal, the semiconductor structure configured such that a resistance between the first current terminal and the second current terminal is based on a control signal provided at the control terminal;
• and
• short circuit protection circuitry coupled between the control terminal and the second current terminal, the short circuit protection circuitry comprising a plurality of diodes coupled in series between the control terminal and the second current terminal.