Pattern forming method and developer
AssigneeJsr Corporation
InventorsRyo KAWAJIRI, Noboru OOTSUKA, Makoto SHIMIZU
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AssigneeJsr Corporation
InventorsRyo KAWAJIRI, Noboru OOTSUKA, Makoto SHIMIZU
Estimating the term…
A pattern forming method includes applying a photoresist composition onto a substrate to form a resist film. The resist film is exposed to an ArF excimer laser. The exposed resist film is developed with a developer. the photoresist composition includes a polymer and a radiation-sensitive acid generator. The polymer has a structural unit having an acid-dissociable group, does not have a phenolic hydroxyl group and exhibits decreased solubility in the developer by dissociation of the acid-dissociable group. The developer includes a nitrogen-containing compound, and the nitrogen-containing compound is at least one of: a condensed ring compound or bridged cyclic compound including at least two nitrogen atoms as ring-forming atoms, a compound having a nitrogen-containing aromatic heterocyclic structure and an acyclic tertiary amine structure in a molecule thereof, an onium salt compound represented by Formula (A-1), or a compound represented by Formula (A-2).
A pattern forming method comprising:
A developer which is capable of developing an exposed resist film, the developer comprising an organic solvent and a nitrogen-containing compound, wherein
Dependencies are inferred from the claim text.