Sensors with a non-planar sensing structure

A structure for a sensor, the structure comprising:

• a plurality of features each having a top surface and a plurality of side surfaces;
• a sensing layer on the top surface and the side surfaces of each feature;
• and
• an interconnect structure including one or more first interlayer dielectric layers over the features and a second interlayer dielectric layer, the one or more first interlayer dielectric layers including a cavity arranged to expose the sensing layer, and the top surface and the side surfaces of the features arranged inside the cavity over the second interlayer dielectric layer,
• wherein the sensing layer is comprised of a material that is sensitive to a property of an analyte solution provided in the cavity.

A method of forming a sensor, the method comprising:

• forming a plurality of semiconductor fins each having a top surface and a plurality of side surfaces;
• forming a sensing layer on the top surface and the side surfaces of each semiconductor fin;
• forming an interconnect structure including one or more first interlayer dielectric layers over the semiconductor fins;
• and
• forming a cavity in the one or more first interlayer dielectric layers that is arranged to expose the sensing layer,
• wherein the sensing layer is comprised of a material that is sensitive to a property of an analyte solution provided in the cavity.