Semiconductor-type battery-free gas sensor or humidity sensor including porous metal-organic framework and method of manufacturing the same

A method of manufacturing a photodiode-type battery-free gas sensor, the method comprising:

• a) forming a first insulator layer for an upper electrode on a part of an upper portion of a semiconductor substrate;
• b) forming a stacked structure of photoelectron collection electrodes and a second insulator layer, which are formed with linear patterns spaced apart from each other by a certain interval, on the upper portion of the semiconductor substrate comprising the first insulator layer;
• c) forming a semiconductor oxide layer which covers the stacked structure of the photoelectron collection electrodes and the second insulator layer;
• d) forming metal nanoparticle catalysts on the semiconductor oxide layer;
• e) forming a metal-organic framework layer which covers the semiconductor oxide layer and the metal nanoparticle catalysts;
• f) forming an upper electrode which covers the photoelectron collection electrodes formed on the first insulator layer;
• and
• g) forming a lower electrode below the semiconductor substrate.

A photodiode-type battery-free humidity sensor comprising:

• a semiconductor substrate;
• a first insulator layer for an upper electrode formed on a part of an upper portion of the semiconductor substrate;
• a second insulator layer which is formed on a part of the semiconductor substrate, formed partially in contact with the first insulator layer, formed in a direction perpendicular to a length direction of the first insulator layer, and formed with linear patterns spaced apart from each other by a certain interval;
• photoelectron collection electrodes which are formed on the first insulator layer and the second insulator layer and formed with linear patterns in the same direction as the second insulator layer;
• a semiconductor oxide layer which covers a portion or an entirety of each of the photoelectron collection electrodes formed with the linear patterns on the second insulator layer and covers the semiconductor substrate positioned between the linear patterns;
• a metal-organic framework layer which covers the semiconductor oxide layer;
• an upper electrode which covers a portion of each of the photoelectron collection electrodes formed on the first insulator layer so as to be connected to the photoelectron collection electrodes;
• and
• a lower electrode in contact with a lower portion of the semiconductor substrate.

A method of manufacturing a photodiode-type battery-free moisture sensor, the method comprising:

• a) forming a first insulator layer for an upper electrode on a part of an upper portion of a semiconductor substrate;
• b) forming a stacked structure of photoelectron collection electrodes and a second insulator layer, which are formed with linear patterns spaced apart from each other by a certain interval, on the upper portion of the semiconductor substrate comprising the first insulator layer;
• c) forming a semiconductor oxide layer which covers the stacked structure of the photoelectron collection electrodes and the second insulator layer;
• d) forming a metal-organic framework layer which covers the semiconductor oxide layer;
• e) forming an upper electrode which covers the photoelectron collection electrodes formed on the first insulator layer;
• and
• g) forming a lower electrode below the semiconductor substrate.

A photodiode-type battery-free gas sensor system comprising:

• a photodiode-type battery-free gas sensor comprising a semiconductor substrate, a first insulator layer for an upper electrode formed on a part of an upper portion of the semiconductor substrate,
• a second insulator layer which is formed on a part of the semiconductor substrate, formed partially in contact with the first insulator layer, formed in a direction perpendicular to a length direction of the first insulator layer, and formed with linear patterns spaced apart from each other by a certain interval,
• photoelectron collection electrodes which are formed on the first insulator layer and the second insulator layer and formed with linear patterns in the same direction as the second insulator layer,
• a semiconductor oxide layer which covers a portion or an entirety of each of the photoelectron collection electrodes formed with the linear patterns on the second insulator layer and covers the semiconductor substrate positioned between the linear patterns,
• metal nanoparticle catalysts formed on the semiconductor oxide layer,
• a metal-organic framework layer formed to cover the semiconductor oxide layer and the metal nanoparticle catalysts,
• an upper electrode which covers a portion of each of the photoelectron collection electrodes formed on the first insulator layer so as to be connected to the photoelectron collection electrodes, and
• a lower electrode in contact with a lower portion of the semiconductor substrate;
• and
• a photodiode-type battery-free humidity sensor comprising a semiconductor substrate,
• a first insulator layer for an upper electrode formed on a part of an upper portion of the semiconductor substrate,
• a second insulator layer which is formed on a part of the semiconductor substrate, formed partially in contact with the first insulator layer, formed in a direction perpendicular to a length direction of the first insulator layer, and formed with linear patterns spaced apart from each other by a certain interval,
• photoelectron collection electrodes which are formed on the first insulator layer and the second insulator layer and formed with linear patterns in the same direction as the second insulator layer,
• a semiconductor oxide layer which covers a portion or an entirety of each of the photoelectron collection electrodes formed with the linear patterns on the second insulator layer and covers the semiconductor substrate positioned between the linear patterns,
• a metal-organic framework layer formed to cover the semiconductor oxide layer,
• an upper electrode which covers a portion of each of the photoelectron collection electrodes formed on the first insulator layer so as to be connected to the photoelectron collection electrodes, and
• a lower electrode which is in contact with a lower portion of the semiconductor substrate.