Method for controlling convection pattern of silicon melt, method for producing silicon single crystals, and device for pulling silicon single crystals

A convection pattern control method of a silicon melt used for manufacturing monocrystalline silicon, the method comprising:

• heating the silicon melt in a quartz crucible in a magnetic-field-free state with a heating portion;
• and
• applying a horizontal magnetic field to the silicon melt in the quartz crucible being rotated, wherein
• in the heating of the silicon melt, the silicon melt is heated with the heating portion whose heating capacity differs on both sides across an imaginary line passing through a center axis of the quartz crucible and being in parallel to a central magnetic field line of the horizontal magnetic field when the quartz crucible is viewed from vertically above, and
• in the applying of the horizontal magnetic field, the horizontal magnetic field of 0.2 tesla or more is applied to fix a direction of a convection flow in a single direction in the silicon melt in a plane orthogonal to a direction in which the horizontal magnetic field is applied.