Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium

A method of manufacturing a semiconductor device, comprising:

• loading a substrate into a process chamber of a substrate processing apparatus that includes the process chamber configured to process the substrate, a gas supply system configured to supply a precursor gas into the process chamber, an exhaust pipe connected to a vacuum pump and configured to evacuate an inside of the process chamber, a gas concentration sensor configured to measure a concentration of the precursor gas passing through a first portion of the exhaust pipe at a front stage of the vacuum pump, a pressure sensor configured to measure a pressure in a second portion of the exhaust pipe at a rear stage of the vacuum pump, and a dilution gas supply system configured to supply a dilution gas into the vacuum pump or the first portion of the exhaust pipe at the front stage of the vacuum pump;
• supplying the precursor gas to the substrate in the process chamber from the gas supply system;
• and
• exhausting the precursor gas in the process chamber while supplying the dilution gas into the vacuum pump or the first portion of the exhaust pipe at the front stage of the vacuum pump at a flow rate corresponding to the concentration of the precursor gas, which is measured by the gas concentration sensor, and the pressure in the second portion of the exhaust pipe at the rear stage of the vacuum pump, which is measured by the pressure sensor.

A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform a process comprising:

• loading a substrate into a process chamber of the substrate processing apparatus that includes the process chamber configured to process the substrate, a gas supply system configured to supply a precursor gas into the process chamber, an exhaust pipe connected to a vacuum pump and configured to evacuate an inside of the process chamber, a gas concentration sensor configured to measure a concentration of the precursor gas passing through a first portion of the exhaust pipe at a front stage of the vacuum pump, a pressure sensor configured to measure a pressure in a second portion of the exhaust pipe at a rear stage of the vacuum pump, and a dilution gas supply system configured to supply a dilution gas into the vacuum pump or the first portion of the exhaust pipe at the front stage of the vacuum pump;
• supplying the precursor gas to the substrate in the process chamber from the gas supply system;
• and
• exhausting the precursor gas while supplying the dilution gas into the vacuum pump or the first portion of the exhaust pipe at the front stage of the vacuum pump at a flow rate corresponding to the concentration of the precursor gas, which is measured by the gas concentration sensor, and the pressure in the second portion of the exhaust pipe at the rear stage of the vacuum pump, which is measured by the pressure sensor.