Non-aqueous tungsten compatible metal nitride selective etchants and cleaners
AssigneeAvantor Performance Materials, Inc.
InventorsChien-Pin Sherman Hsu, Sam Chun-Yi Chiu, Chu-Hung Wade Wei, Mi Yeon Oh
Life of this patent
Estimating the term…
Abstract
Provided therefore herein is a novel acidic fluoride activated cleaning chemistry. The present invention includes novel acidic fluoride activated, unique organic-solvent based microelectronic selective etchant/cleaner compositions with high metal nitride etch and broad excellent compatibility, including tungsten (W) and low-k. It does not use W-incompatible oxidizers, such as hydrogen peroxide or particle-generating corrosion inhibitors.
Claims12
A non-aqueous cleaning composition for micro-electronics applications comprising about 0.01% to about 5.0% by weight of a fluoride activating agent, about 0.01% to about 20.00% by weight of at least one oxidizer, about 80.00% to about 99.90% by weight of an anhydrous organic solvent, wherein said cleaning composition has a pH equal to 5.5 or less, and wherein said oxidizer is not hydrogen peroxide.
A method of cleaning a micro-electronic substrate comprising contacting said micro-electronic substrate with a cleaning composition comprising about 0.01% to about 5.0% by weight of a fluoride activating agent, about 0.01% to about 20.00% by weight of at least one oxidizer, about 80.00% to about 99.90% by weight of an anhydrous organic solvent, wherein said cleaning composition has a pH equal to 5.5 or less, and wherein said oxidizer is not hydrogen peroxide.
Dependencies are inferred from the claim text.