Organometallic compounds useful for chemical phase deposition

Abstract

Organometallic compounds useful in chemical phase deposition processes such as atomic layer deposition (ALD) and chemical vapor deposition (CVD). The compounds correspond in structure to Formula 1: [(R1R2R3(A))x-M(CO)y]z wherein R1, R2 and R3 are independently selected from the group consisting of H, a lower alkyl group and a phenyl group optionally substituted with at least one independently selected lower alkyl group, with the proviso that at least one of R1, R2 and R3 must be other than H; M is selected from the group consisting of the cobalt group metals, the iron group metals, the manganese group metals, and the chromium group metals; A is selected from the group consisting of Si, Ge, and Sn; and wherein: x=1, y=4, and z=1 when M is selected from the group consisting of a cobalt group metal, x=1, y=5, and z=1 when M is selected from the group consisting of a manganese group metal, x=2, y=4, and z=1 when M is selected from the group consisting of a chromium group metal, and x=2, y=4, and z=1 or, alternatively, x=1, y=4, and z=2 when M is selected from the group consisting of an iron group metal. Methods of deposition are also provided which involve the reaction of at least one of the compounds of the invention, in the presence of co-reagents, to generate metal carbonyl hydrides which can decompose cleanly and thermally to form substantially pure metal films, metal oxide films, metal nitride films, metal phosphide films, metal boride films or metal sulphide films. Methods of selective deposition, such that metal or metal-containing films are deposited selectively on certain substrates and not on other substrate materials.

Dependencies are inferred from the claim text.