Methods of fabricating magneto-resistive random-access memory (mram) devices with self-aligned top electrode via and structures formed thereby

A method of fabricating a magnetic random access memory (MRAM) device, comprising:

• forming a bottom electrode, a magnetic tunnel junction (MTJ) structure on the bottom electrode, and a top electrode on the MTJ structure;
• forming spacers on sidewalls of the top electrode and the MTJ structure;
• depositing a first dielectric layer to cover the spacers and the top electrode;
• etching back the first dielectric layer to expose top surfaces of the spacers and the top electrode;
• selectively depositing a patterned etch stop layer on the first dielectric layer and the spacers to expose the top electrode;
• forming a second dielectric layer on the patterned etch stop layer;
• etching the second dielectric layer to form a via hole that exposes the top electrode and a portion of the patterned etch stop layer;
• and
• forming a top electrode via in the via hole.

A magnetic random access memory (MRAM) device, comprising:

• a bottom electrode over a substrate;
• a magnetic tunnel junction (MTJ) structure on the bottom electrode;
• a top electrode on the MTJ structure;
• spacers on sidewalls of the top electrode and the MTJ structure;
• a first dielectric layer surrounding the spacers;
• a patterned etch stop layer on the first dielectric layer and the spacers;
• a second dielectric layer on the patterned etch stop layer;
• and
• a top electrode via embedded in the second dielectric layer and in contact with the top electrode and the patterned etch stop layer.