Magnetic memory device

A magnetic memory device, comprising:

• an interconnection line on a substrate;
• a contact, which is between the substrate and the interconnection line and connects the interconnection line to the substrate;
• a conductive line on the interconnection line;
• a magnetic tunnel junction pattern between the interconnection line and the conductive line;
• a lower contact plug, which is between the magnetic tunnel junction pattern and the interconnection line;
• a bottom electrode between the magnetic tunnel junction pattern and the lower contact plug;
• and
• a top electrode between the magnetic tunnel junction pattern and the conductive line,
• wherein the bottom electrode and the top electrode area spaced apart from each other in a first direction, and wherein a first thickness of the bottom electrode in the first direction is about 0.6 to 1.1 times a second thickness of the magnetic tunnel junction pattern in the first direction.

A magnetic memory device, comprising:

• an interconnection structure on a substrate, the interconnection structure comprising interconnection lines, which are spaced apart from each other in a first direction, and contacts, which are between the interconnection lines;
• a lower contact plug, which is on the interconnection structure and contacts an uppermost one of the interconnection lines;
• a magnetic tunnel junction pattern on the lower contact plug;
• a bottom electrode between the lower contact plug and the magnetic tunnel junction pattern;
• a conductive line on the magnetic tunnel junction pattern;
• and
• a top electrode between the magnetic tunnel junction pattern and the conductive line,
• wherein the bottom electrode and the top electrode are spaced apart from each other in the first direction, and wherein a first thickness of the bottom electrode in the first direction is about 0.6 to 1.1 times a second thickness of the magnetic tunnel junction pattern in the first direction.