Curing pre-applied and laser-ablated underfill via a laser

A system for coupling a semiconductor device to a target substrate, wherein the semiconductor device includes a first surface and a first contact disposed on the first surface, the target substrate includes a second surface and a second contact disposed on the second surface, the system comprising:

• an underfill (UF) deposition apparatus that deposits uncured underfill (UF) material on the second surface, wherein the uncured UF material substantially covers the second surface and substantially encapsulates the second the second contact;
• an ablation apparatus that removes an excess portion of the pre-cured UF material and forms a planar surface of the pre-cured UF material that at least partially exposes a distal portion of the second contact;
• a pick and place head (PPH) that positions the semiconductor device proximate to the target substrate to form a spatial alignment of the first contact with the second contact, wherein the first and the second surfaces are opposed surfaces, and the at least partially exposed distal portion of the second contact is adjacent a distal portion of the first contact;
• an electrical coupling apparatus that forms an electrical coupling between the semiconductor device and the target substrate by bonding the at least partially exposed distal portion of the second contact to the adjacent distal portion of the first contact;
• and
• a curing apparatus that cures the pre-cured UF material, wherein the cured UF material mechanically stabilizes the electrical coupling between the semiconductor device and the target substrate.

A display device, comprising:

• a semiconductor device that includes a first surface and a first contact disposed on the first surface;
• and
• a target substrate that includes a second surface and a second contact disposed on the second surface, and
• wherein the display device was assembled by a method comprising:
• depositing uncured underfill (UF) material on the second surface, wherein the uncured UF material substantially covers the second surface and substantially encapsulates the second contact;
• applying first thermal energy to the uncured UF material to pre-cure the uncured UF material;
• irradiating an excess portion of the pre-cured UF material with a first photon beam to remove the excess portion of the pre-cured UF material to form a planar surface of the pre-cured UF material that at least partially exposes a distal portion of the second contact;
• positioning the semiconductor device proximate to the target substrate to form a spatial alignment of the first contact with the second contact, wherein the first and the second surfaces are opposed surfaces, and the at least partially exposed distal portion of the second contact is adjacent a distal portion of the first contact;
• forming an electrical coupling between the semiconductor device and the target substrate by bonding the at least partially exposed distal portion of the second contact to the adjacent distal portion of the first contact;
• and
• curing the pre-cured UF material, wherein the cured UF material mechanically stabilizes the electrical coupling between the semiconductor device and the target substrate.