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US 2020/0395488 A1Published application
Thin-film device
AssigneeTianma Japan, Ltd.
InventorsKazushige TAKECHI, Jun TANAKA, Kenji SERA, Yong YUAN
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Abstract
A thin-film device includes a polysilicon element and an oxide semiconductor element. The polysilicon element includes a first part made of low-resistive polysilicon. The oxide semiconductor element includes a second part made of low-resistive oxide semiconductor. The first part and the second part are disposed to overlap each other and connected.
Claims19
A thin-film device comprising:
- a polysilicon element;
- and
- an oxide semiconductor element,
- wherein the polysilicon element includes a first part made of low-resistive polysilicon,
- wherein the oxide semiconductor element includes a second part made of low-resistive oxide semiconductor, and
- wherein the first part and the second part are disposed to overlap each other and connected.
3 more elements
A method of manufacturing a thin-film device, comprising:
- forming a polysilicon film including a third part made of highly-resistive polysilicon and a fourth part made of low-resistive polysilicon;
- and
- forming an oxide semiconductor film including a fifth part made of highly-resistive oxide semiconductor and a sixth part made of low-resistive oxide semiconductor that is disposed to overlap the fourth part and connected with the fourth part.
Dependencies are inferred from the claim text.