Gradient Doped Region of Recessed Fin Forming a FinFET Device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJyun-Hao Lin, Chun-Feng Nieh, Yu-Chang Lin, Huicheng Chang
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Abstract
An embodiment is a method of manufacturing a semiconductor device. The method includes forming a fin on a substrate. A gate structure is formed over the fin. A recess is formed in the fin proximate the gate structure. A gradient doped region is formed in the fin with a p-type dopant. The gradient doped region extends from a bottom surface of the recess to a vertical depth below the recess in the fin. A source/drain region is formed in the recess and on the gradient doped regions.
Claims20
A semiconductor device comprising:
- a first p-type field effect transistor (PFET) structure, the first PFET structure comprising:
- a fin on a substrate;
- a gate structure over the fin;
- an epitaxial source/drain region on the fin proximate the gate structure;
- and
- a gradient doped region in the fin extending from a bottom of the epitaxial source/drain region into the fin, wherein the gradient doped region comprises a boron dopant.
A semiconductor device comprising:
- a fin on a substrate;
- a first p-type field effect transistor (PFET) structure, the first PFET structure comprising:
- a first epitaxial source/drain region on the fin;
- and
- a gradient doped region in the fin extending from a bottom and sidewalls of the first epitaxial source/drain region into the fin;
- and
- a second PFET structure comprising a second epitaxial source/drain region on the fin, wherein the second epitaxial source/drain region is on an implant-free region of the fin.
A semiconductor device comprising:
- a fin on an n-well region of a substrate;
- a gate structure over the fin;
- an epitaxial source/drain region on the fin proximate the gate structure;
- a first doped region in the fin extending from a bottom of the epitaxial source/drain region into the fin, wherein a dopant concentration of the first doped region decreases from the bottom of the epitaxial source/drain region in a direction towards the substrate;
- and
- a second doped region in the fin extending from sidewalls of the epitaxial source/drain region into the fin, wherein a dopant concentration of the second doped region decreases from the sidewalls of the epitaxial source/drain region in a direction away from the sidewalls of the epitaxial source/drain region.
Dependencies are inferred from the claim text.