Method of fabricating a semiconductor device

A method of fabricating a semiconductor device, comprising:

• forming a trench on a substrate, the trench defining an active pattern in the substrate;
• forming a device isolation pattern to cover a lower portion of the trench;
• forming a first dummy gate pattern on the active pattern and the device isolation pattern, the first dummy gate pattern crossing over the active pattern and the device isolation pattern, a top surface of the first dummy gate pattern on the device isolation pattern being at a level that is equal to or higher than a top surface of the active pattern;
• and
• forming a second dummy gate pattern on the first dummy gate pattern.

A method of fabricating a semiconductor device, comprising:

• forming an active pattern, which has an upward protruding shape, on a substrate;
• and
• forming a dummy gate pattern on the active pattern, the dummy gate pattern crossing the active pattern and extending in a direction,
• the forming the dummy gate pattern including forming a first dummy gate pattern to cover a side surface of the active pattern and forming a second dummy gate pattern on the first dummy gate pattern,
• the first dummy gate pattern including a first semiconductor material and a second semiconductor material that is different from the first semiconductor material.