Back to results
US 2020/0395447 A1Published application
Semiconductor Device and Method for Fabricating a Wafer
AssigneeInfineon Technologies AG
InventorsHelmut Brech, Albert Birner, John Twynam
Life of this patent
Estimating the term…
Abstract
In an embodiment, a semiconductor device includes a support layer having a first surface configured to support epitaxial growth of at least one Group III nitride, an epitaxial Group III nitride-based multi-layer structure positioned on the first surface of the support layer, and a parasitic channel suppression region positioned at the first surface of the support layer.
Claims20
A semiconductor device, comprising:
- a support layer having a first surface configured to support epitaxial growth of at least one Group III nitride;
- an epitaxial Group III nitride-based multi-layer structure positioned on the first surface of the support layer;
- and
- a parasitic channel suppression region positioned at the first surface of the support layer.
1 more element
A method of fabricating a semiconductor wafer, the method comprising:
- implanting species into a first surface of a wafer, the first surface configured to support epitaxial growth of at least one Group III nitride layer;
- forming a treated first surface comprising a parasitic channel suppression region;
- and
- epitaxially growing a multilayer Group III nitride structure on the treated first surface.
1 more element
A method of fabricating a semiconductor wafer, the method comprising:
- epitaxially growing a multilayer Group III nitride structure on a first surface of a wafer, the first surface configured to support epitaxial growth of at least one Group III nitride layer;
- implanting species into a second surface of the wafer, the second surface opposing the first surface;
- and
- forming a parasitic channel suppression region at the interface between the first surface and the multilayer Group III nitride structure.
1 more element
Dependencies are inferred from the claim text.