A semiconductor device and a method for forming the semiconductor device

A method comprising:

• providing a semiconductor-on-insulator (SOI) structure comprising a substrate, an insulator layer over the substrate, and a semiconductor layer over the insulator layer;
• forming a first conductivity region and a second conductivity region at least partially within the semiconductor layer;
• forming a gate structure over the semiconductor layer and between the first conductivity region and the second conductivity region;
• forming a first conductor element through the semiconductor layer and the insulator layer of the SOI structure to electrically contact the substrate;
• forming a second conductor element to electrically contact the gate structure;
• and
• forming a conducting member to connect the first conductor element and the second conductor element to electrically couple the first conductor element and the second conductor element.

A structure comprising a plurality of devices, wherein one or more of the devices comprises:

• a semiconductor-on-insulator (SOI) structure comprising a substrate, an insulator layer over the substrate, and a semiconductor layer over the insulator layer, wherein the semiconductor layer comprises a first conductivity region and a second conductivity region at least partially arranged within the semiconductor layer;
• a gate structure arranged over the semiconductor layer and between the first conductivity region and the second conductivity region;
• a first conductor element arranged through the semiconductor layer and the insulator layer of the SOI structure to electrically contact the substrate;
• a second conductor element arranged to electrically contact the gate structure;
• and
• a conducting member connecting the first conductor element and the second conductor element to electrically couple the first conductor element and the second conductor element.