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US 2020/0395307 A1Published application
Package-level backside metallization (bsm)
AssigneeIntel Corporation
InventorsShenavia S. Howell, John J. Beatty, Raymond A. Krick, Suzana Prstic
Life of this patent
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Abstract
Embodiments may relate to a microelectronic package that includes a die and a backside metallization (BSM) layer positioned on the face of the die. The BSM layer may include a feature that indicates that the BSM layer was formed on the face of the die by a masked deposition technique. Other embodiments may be described or claimed.
Claims20
A microelectronic package comprising:
- a substrate;
- a die coupled to the substrate at a first face of the die;
- a backside metallization (BSM) layer on a second face of the die, wherein the second face is opposite the first face;
- and
- a solder thermal interface material (STIM) coupled with the BSM layer;
- wherein the BSM layer includes a feature that is:
- bleed over of the BSM layer beyond a periphery of the die;
- or
- a portion of the second face of the die at a periphery of the die that does not include the BSM layer.
6 more elements
A microelectronic package comprising:
- a die with a face;
- and
- a backside metallization (BSM) layer positioned on the face of the die;
- and
- wherein the BSM layer includes a feature that indicates that the BSM layer was formed on the face of the die by a masked deposition technique.
2 more elements
A method of forming a microelectronic package, the method comprising:
- identifying a singulated die with a face;
- positioning a mask such that the face of the singulated die is at least partially exposed through an opening in the mask;
- and
- depositing a backside metallization (BSM) material on the face of the singulated die through the opening.
1 more element
Dependencies are inferred from the claim text.