Microelectronic structures having multiple microelectronic devices connected with a microelectronic bridge embedded in a microelectronic substrate

A microelectronic structure comprising:

• a first microelectronic device, wherein the first microelectronic device includes a plurality of high density interconnect structures and a plurality of lower density interconnect structures on an active surface thereof;
• a second microelectronic device, wherein the second microelectronic device includes a plurality of high density interconnect structures and a plurality of lower density interconnect structures on an active surface thereof;
• a microelectronic bridge having a first end attached to the plurality of high density interconnect structures of the first microelectronic device, and the microelectronic bridge having a second end attached to the plurality of high density interconnect structures of the second microelectronic device;
• a microelectronic substrate having a cavity defined therein extending from a first surface of the microelectronic substrate, wherein the plurality of lower density interconnect structures of the first microelectronic device and the plurality of lower density interconnect structures of the second microelectronic device are electrically attached to the first surface of the microelectronic substrate, and wherein the microelectronic bridge extends into the microelectronic substrate cavity;
• an adhesive layer between and in contact with a bottom of the microelectronic bridge and a bottom of the cavity;
• and
• an underfill material between the first microelectronic device active surface and the microelectronic substrate first surface, between the second microelectronic device active surface and the microelectronic substrate first surface, and within a portion of the microelectronic substrate cavity, the underfill material in contact with the adhesive layer.

A computing device, comprising:

• a board;
• and
• a microelectronic structure attached to the board, wherein the microelectronic structure comprises:
• a first microelectronic device and a second microelectronic device, wherein the first microelectronic device and the second microelectronic device each include a plurality of high density interconnect structures and a plurality of lower density interconnect structures on an active surface thereof;
• an encapsulant material, wherein a first portion of the encapsulant material is between and in contact with the first and second microelectronic devices, a second portion of the encapsulant material is in contact with a side of the first microelectronic device opposite the first portion of the encapsulant layer, and a third portion of the encapsulant material is in contact with a side of the second microelectronic device opposite the first portion of the encapsulant layer;
• a microelectronic bridge attached to the reconstituted wafer, wherein the microelectronic bridge has a first end attached to the plurality of high density interconnect structures of the first microelectronic device, and the microelectronic bridge has a second end attached to the plurality of high density interconnect structures of the second microelectronic device;
• and
• a microelectronic substrate having a cavity defined therein extending from a first surface of the microelectronic substrate, wherein the plurality of lower density interconnect structures of the first microelectronic device and the plurality of lower density interconnect structures of the second microelectronic device are electrically attached to the first surface of the microelectronic substrate, and wherein the microelectronic bridge extends into the microelectronic substrate cavity.

A computing device, comprising:

• a board;
• and
• a microelectronic structure attached to the board, wherein the microelectronic structure comprises:
• a first microelectronic device, wherein the first microelectronic device includes a plurality of high density interconnect structures and a plurality of lower density interconnect structures on an active surface thereof;
• a second microelectronic device, wherein the second microelectronic device includes a plurality of high density interconnect structures and a plurality of lower density interconnect structures on an active surface thereof;
• a microelectronic bridge having a first end attached to the plurality of high density interconnect structures of the first microelectronic device, and the microelectronic bridge having a second end attached to the plurality of high density interconnect structures of the second microelectronic device;
• a microelectronic substrate having a cavity defined therein extending from a first surface of the microelectronic substrate, wherein the plurality of lower density interconnect structures of the first microelectronic device and the plurality of lower density interconnect structures of the second microelectronic device are electrically attached to the first surface of the microelectronic substrate, and wherein the microelectronic bridge extends into the microelectronic substrate cavity;
• an adhesive layer between and in contact with a bottom of the microelectronic bridge and a bottom of the cavity;
• and
• an underfill material between the first microelectronic device active surface and the microelectronic substrate first surface, between the second microelectronic device active surface and the microelectronic substrate first surface, and within a portion of the microelectronic substrate cavity, the underfill material in contact with the adhesive layer.