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US 2020/0395299 A1Published application
Semiconductor device and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing-Han LEE, Shau-Lin SHUE
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Abstract
A semiconductor device includes a first interlayer dielectric (ILD) layer disposed over a substrate, and a first metal wiring pattern formed in the first interlayer dielectric layer and extending in a first direction parallel with the substrate. In a cross section along a second direction which crosses the first direction and is in parallel with the substrate, a top of the first metal wiring pattern is covered by a first two-dimensional material layer.
Claims20
A semiconductor device, comprising:
- a first metal wiring pattern disposed over a substrate;
- a single layer of a first two-dimensional material layer covering sides and bottom of the first metal wiring pattern as seen in cross section;
- a second metal wiring pattern disposed over the first metal wiring pattern and connected to the first metal wiring pattern;
- a single layer of a second two-dimensional material layer covering sides and bottom of the second metal wiring pattern as seen in cross section,
- wherein the second two-dimensional material layer is disposed between the second wiring pattern and the first wiring pattern;
- and
- a single layer of a third two-dimensional material layer covering a top of the second metal wiring pattern,
- wherein the second two-dimensional material layer and the third two-dimensional material layer are different materials.
5 more elements
A semiconductor device, comprising:
- a first etch stop layer disposed over a substrate;
- a first metal wiring pattern disposed over the first etch stop layer;
- a single layer of a first two-dimensional material layer covering sides of the first metal wiring pattern and disposed between the first metal wiring pattern and the first etch stop layer as seen in cross section;
- a single layer of a second two-dimensional material layer covering a first portion of a top of the first wiring pattern;
- a single layer of a third two-dimensional material layer covering a second portion of the top of the first wiring pattern;
- a second wiring pattern disposed over the first wiring pattern,
- wherein the single layer of third two-dimensional material layer is disposed between the first wiring pattern and the second wiring pattern, and the single layer of the third two-dimensional material layer is disposed on sides of the second wiring pattern as seen in cross section, and
- wherein the third two-dimensional material layer and the second two-dimensional material layer are different materials;
- and
- a second etch stop layer disposed over second two-dimensional material layer.
7 more elements
A semiconductor device, comprising:
- a first metal layer disposed over a substrate;
- a single layer of a first two-dimensional material layer surrounding sides and bottom of the first metal layer as seen in cross section;
- a single layer of a second two-dimensional material layer disposed over a top of the first metal layer as seen in the cross section,
- wherein the first two-dimensional material layer and the second two-dimensional material layer are different materials;
- an etch stop layer disposed over the second two-dimensional material layer;
- a second metal layer disposed over the first metal wiring pattern and connected to the first metal wiring pattern;
- a single layer of a third two-dimensional material layer surrounding sides and a bottom of the second metal layer as seen in the cross section,
- wherein the third two-dimensional material layer passes through the etch stop layer and the second two-dimensional material layer.
5 more elements
Dependencies are inferred from the claim text.