Method for producing transistors implemented at low temperature

A method for producing at least one first JFET transistor, comprising at least the steps of:

• a) producing, on a first substrate, a stack comprising at least one first layer comprising a first semiconductor doped according to a first conductivity type and a second layer comprising a second semiconductor doped according to a second conductivity type opposite to the first conductivity type, said at least one first layer being disposed between the first substrate and the second substrate, then
• b) securing the stack against a second substrate such that the stack is disposed between the first substrate and the second substrate, then
• c) removing the first substrate, then
• d) etching said at least one first layer such that at least one remaining portion of said at least one first layer forms a front gate of said at least one first JFET transistor, then
• e) etching the second layer such that at least one first remaining portion of the second layer is disposed below the front gate of said at least one first JFET transistor and forms the channel, the source and the drain of said at least one first JFET transistor.