Line structure for fan-out circuit and manufacturing method thereof, and photomask pattern for fan-out circuit
AssigneeMacronix International Co., Ltd.
InventorsWEI-HUNG WANG, Chih-Hao Huang
Life of this patent
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Abstract
A line structure for fan-out circuit having a dense-line area and a fan-out area is provided. The line structure includes a plurality of dense lines arranged in the dense-line area parallel to a first direction, a plurality of pads disposed in the fan-out area, and a plurality of connecting lines arranged in the fan-out area parallel to a second direction. The connecting lines respectively connect one of the dense lines with one of the pads, wherein at least one of the connecting lines is a wavy line.
Claims20
A line structure for fan-out circuit, the fan-out circuit having a dense-line area and a fan-out area, the line structure comprising:
- a plurality of dense lines, arranged in the dense-line area parallel to a first direction;
- a plurality of pads, located in the fan-out area;
- and
- a plurality of connecting lines, arranged in the fan-out area parallel to a second direction, and respectively connecting one of the plurality of dense lines and one of the plurality of pads, wherein at least one of the connecting lines is a wavy line.
A manufacturing method of a line structure for fan-out circuit, the fan-out circuit having a dense-line area and a fan-out area, the method comprising:
- forming a sacrificed layer on a conductive layer;
- forming a patterned photoresist layer on the sacrificed layer, the patterned photoresist layer comprising a plurality of first linear patterns arranged in the dense-line area parallel to a first direction and a plurality of second linear patterns arranged in the fan-out area parallel to a second direction, wherein at least one side of the second linear patterns has a wavy side profile;
- transferring the plurality of first linear patterns and the plurality of second linear patterns to the sacrificed layer to form a plurality of first lines and a plurality of second lines and expose the conductive layer, wherein at least one sidewall of the second lines is wavy;
- forming a spacer on a sidewall of each of the first lines and the at least one sidewall of the second lines;
- removing the plurality of first lines and the plurality of second lines;
- and
- etching the exposed conductive layer by using the spacer as mask, such that the conductive layer becomes a plurality of dense lines in the dense-line area and a plurality of connecting lines in the fan-out area, wherein at least one of the connecting lines is a wavy line.
A photomask pattern for a fan-out circuit, wherein the fan-out circuit comprises a dense-line area and a fan-out area, the photomask pattern comprising:
- a main pattern, comprising:
- a plurality of strip patterns arranged in the dense-line area parallel to a first direction;
- and
- a plurality of connecting patterns arranged in the fan-out area parallel to a second direction for connecting each of the strip patterns;
- and
- an assistant pattern, disposed in a region among one of the strip patterns and two of the adjacent connecting patterns, wherein the assistant pattern comprises a plurality of line patterns parallel to the second direction, and the line patterns are in direct contact with the one of the strip patterns.
Dependencies are inferred from the claim text.