Back to results
US 2020/0395237 A1Published application
Semiconductor device and method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTzu-Ching Lin, Tuoh Bin Ng
Life of this patent
Estimating the term…
Abstract
An embodiment is a device including a first fin extending from a substrate, a first gate stack over and along sidewalls of the first fin, a first gate spacer disposed along a sidewall of the first gate stack, and a first source/drain region in the first fin and adjacent the first gate spacer. The first source/drain region including a first insulator layer on the first fin, and a first epitaxial layer on the first insulator layer.
Claims21
-9. (canceled)
A method comprising:
- depositing a first dummy gate over and along sidewalls of a first fin extending upwards from a substrate;
- forming a first gate spacer along a sidewall of the first dummy gate;
- forming a first recess in the first fin adjacent the first gate spacer;
- and
- forming a first source/drain region in the first recess, the forming the first source/drain region comprising:
- depositing a first insulator layer in the first recess;
- and
- epitaxially growing a first layer in the first recess, the first layer being over the first insulator layer.
5 more elements
A method comprising:
- forming a first dummy gate over and along sidewalls of a first fin extending upwards from a substrate;
- forming a first gate spacer along a sidewall of the first dummy gate;
- etching a first recess in the first fin adjacent the first gate spacer;
- forming a first source/drain region in the first recess, the first source/drain region comprising a first insulator layer, a first epitaxial layer, and a second epitaxial layer, the first insulator layer being deposited in the first recess, wherein after the first insulator layer is formed, the first fin being exposed at sidewalls of the first recess, the first epitaxial layer being grown from the exposed first fin in the first recess, and the second epitaxial layer being grown from the first epitaxial layer, wherein after growing the second epitaxial layer, an air gap is between the first insulator layer and the second epitaxial layer;
- and
- replacing the first dummy gate with a functional gate stack disposed over and along sidewalls of the first fin.
3 more elements
A method comprising:
- forming a fin extending from a substrate;
- forming a first gate over and along sidewalls of a first fin;
- forming a gate spacers along sidewalls of the first gate;
- forming a first recess in the first fin adjacent a first one of the gate spacers;
- forming a first insulator layer in the first recess, wherein after the first insulator layer is formed, the first fin being exposed at sidewalls of the first recess;
- and
- growing a first epitaxial layer over the first insulator layer in the first recess, wherein after growing the first epitaxial layer, a gap is between the first insulator layer and the first epitaxial layer.
4 more elements
Dependencies are inferred from the claim text.