Deuterium-containing films
AssigneeApplied Materials, Inc.
InventorsSean M. Seutter, Mun Kyu Park, Hien M Le, Chih-Chiang Chuang
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Abstract
Films are modified to include deuterium in an inductive high density plasma chamber. Chamber hardware designs enable tunability of the deuterium concentration uniformity in the film across a substrate. Manufacturing of solid state electronic devices include integrated process flows to modify a film that is substantially free of hydrogen and deuterium to include deuterium.
Claims20
A method comprising modifying a substrate with a film deposited thereon, the film substantially free of hydrogen and deuterium to contain deuterium.
A method comprising exposing a substrate with a film substantially free of hydrogen and deuterium deposited thereon to a plasma comprising a deuterium-containing precursor to form a modified deuterium-containing film on the substrate.
An apparatus comprising
- a chamber body comprising a top and at least one side wall defining a plasma cavity;
- a first gas inlet centrally located in the top of the chamber body, the first gas inlet configured to deliver a flow of a plasma comprising a deuterium-containing precursor to the plasma cavity;
- a second gas inlet located in the at least one side wall of the chamber body, the second gas inlet configure to deliver a flow of the plasma comprising the deuterium-containing precursor to the plasma cavity;
- a top coil with antennae in the top of the chamber body;
- at least one side coil in the side of the chamber body;
- and
- a multi-zone susceptor, each zone having independent temperature control.
Dependencies are inferred from the claim text.