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US 2020/0395196 A1Published application
Plasma processing apparatus and method of manufacturing semiconductor device using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJUNG-PYO HONG, JONG-WOO SUN, JUNG-MO SUNG
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Abstract
A plasma processing apparatus includes a process chamber having an inner space, an electrostatic chuck in the process chamber and to which a substrate is mounted, a gas injection unit to inject a process gas into the process chamber at a side of the process chamber, a plasma applying unit to transform the process gas injected into the process chamber into plasma, and a plasma adjusting unit disposed around the electrostatic chuck and operative to adjust the density of the plasma across the substrate.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- mounting a substrate on an electrostatic chuck in a process chamber;
- injecting a process gas into the process chamber;
- and
- processing the substrate by transforming the process gas into plasma via a plasma processing apparatus including a plasma adjusting unit around the electrostatic chuck,
- wherein the processing of the substrate comprises transforming the process gas in the process into plasma via a plasma applying unit, and adjusting a plasma density on the substrate via the plasma adjusting unit,
- wherein the plasma applying unit comprises a high frequency power source electrically connected to a high frequency electrode unit including a high frequency antenna, and
- wherein the plasma adjusting unit comprises a body portion including ferromagnetic material and an auxiliary bias power source electrically connected to the body portion and to adjust a magnetic field by applying a voltage to the body portion through the auxiliary bias power source.
4 more elements
A method of manufacturing a semiconductor device, the method comprising:
- providing a process chamber having an interior in which plasma processing takes place;
- mounting a substrate on a substrate support in the process chamber, the substrate support including an electrostatic chuck having a support surface dedicated to support a substrate to be plasma processed;
- injecting a process gas into the interior of the process chamber by a gas injector;
- generating a magnetic field that transforms the process gas injected into the process chamber into plasma by a plasma generator;
- and
- processing the substrate using plasma and adjusting a plasma density on the substrate by a plasma adjusting unit,
- wherein the plasma adjusting unit including a body comprising ferromagnetic material disposed radially outwardly of the support surface of the electrostatic chuck around the electrostatic chuck and the substrate, and an auxiliary power source electrically coupled to the body,
- wherein the body shields the magnetic field at the substrate responsive to the auxiliary power source, and
- wherein the plasma generator comprises a high frequency electrode unit comprising at least one electrode including a high frequency antenna.
6 more elements
A method of manufacturing a semiconductor device, the method comprising:
- providing a process chamber having an interior in which plasma processing takes place;
- mounting a substrate on a substrate support in a lower part of the process chamber, the substrate support including an electrostatic chuck having a support surface dedicated to support a substrate to be plasma processed;
- injecting a process gas into the interior of the process chamber by a gas injector;
- generating a magnetic field that transforms the process gas injected into the process chamber into plasma by a plasma generator;
- and
- processing the substrate using plasma and adjusting a plasma density on the substrate by a plasma adjusting unit,
- wherein the plasma adjusting unit including a body comprising ferromagnetic material disposed radially outwardly of the support surface of the electrostatic chuck around the electrostatic chuck and the substrate, and an auxiliary power source electrically coupled to the body,
- wherein the body shields the magnetic field at a peripheral part of the substrate responsive to the auxiliary power source;
- and
- wherein the plasma generator comprises a high frequency electrode unit in an upper part of the process chamber, a high frequency power source electrically connected to the high frequency electrode unit and a bias power source electrically connected to the electrostatic chuck, and the high frequency electrode unit comprising at least one electrode including a high frequency antenna that generates the magnetic field that transforms the process gas into plasma responsive to the high frequency power source.
7 more elements
Dependencies are inferred from the claim text.