Integrated circuit device including vertical memory

An integrated circuit device comprising:

• a substrate including a main surface;
• a pair of word line cut regions extending lengthwise in a first horizontal direction over the substrate and spaced apart from each other in a second horizontal direction perpendicular to the first horizontal direction with a unit block region located therebetween, the first and second horizontal directions parallel to the main surface of the substrate;
• a plurality of word lines extending in the unit block region in a third horizontal direction parallel to the main surface of the substrate and overlapping each other in a vertical direction;
• a string selection line structure stacked on the plurality of word lines in the unit block region;
• and
• a plurality of channel structures extending in the vertical direction through the plurality of word lines and the string selection line structure in the unit block region,
• wherein the string selection line structure comprises a string selection bent line comprising a lower horizontal extension portion extending in the third horizontal direction at a first level higher than the plurality of word lines, an upper horizontal extension portion extending in the third horizontal direction at a second level higher than the first level, and a vertical extension portion connected between the lower horizontal extension portion and the upper horizontal extension portion.

An integrated circuit device comprising:

• a substrate;
• a plurality of word line cut regions arranged over the substrate;
• and
• a plurality of unit block regions respectively arranged one by one between the plurality of word line cut regions and each comprising a string selection line structure,
• wherein, in each of the plurality of unit block regions, the string selection line structure comprises a string selection bent line comprising a lower horizontal extension portion extending in a horizontal direction at a first level over the substrate, an upper horizontal extension portion extending in the horizontal direction at a second level higher than the first level, and a vertical extension portion connected between the lower horizontal extension portion and the upper horizontal extension portion.