Back to results
US 2020/0393752 A1Published application
Semiconductor apparatus and method of operating the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWen LO, Shih-Ming CHANG, Chun-Hung LIU
Life of this patent
Estimating the term…
Abstract
A method of operating a semiconductor apparatus includes forming a first electron beam passing through a first shaping aperture; modifying an energy distribution of the first electron beam by a second shaping aperture, such that the first electron beam has a main region and an edge region having a greater energy than the main region; and exposing a workpiece to the main region and the edge region of the first electron beam to create a pattern.
Claims20
A method comprising:
- forming a first electron beam passing through a first shaping aperture;
- modifying an energy distribution of the first electron beam by a second shaping aperture, such that the first electron beam has a main region and an edge region having a greater energy than the main region;
- and
- exposing a workpiece to the main region and the edge region of the first electron beam to create a pattern.
1 more element
A method comprising:
- forming a first electron beam passing through a first shaping aperture, wherein the first electron beam has a main region and an edge region;
- reducing an energy intensity of the main region of the first electron beam by a second shaping aperture;
- maintaining an energy intensity of the edge region of the first electron beam by the second shaping aperture;
- and
- exposing a workpiece to the main region and the edge region of the first electron beam to create a pattern.
2 more elements
An apparatus comprising:
- a radiation source configured to generate an electron beam;
- a first shaping aperture below the radiation source, wherein a portion of the electron beam passes through the first shaping aperture;
- and
- a second shaping aperture below the first shaping aperture, and having a barrier structure configured to modify an energy distribution of the portion of the first electron beam.
1 more element
Dependencies are inferred from the claim text.