Tungsten Sputtering Target And Method For Producing Same
AssigneeJX Metals Corporation
InventorsShinji Sogawa, Takafumi Dasai, Seiji Nakasumi
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Abstract
According to one of various aspects of the present invention, a tungsten sputtering target has a purity of tungsten is 5 N (99.999% by weight) or more, and an impurity of carbon and an impurity of oxygen contained in tungsten are 50 ppm by weight or less, respectively, and an average grain size of tungsten crystal is more than 100 μm.
Claims7
A tungsten sputtering target, wherein a purity of tungsten is 5 N (99.999% by weight) or more, and an impurity of carbon and an impurity of oxygen contained in tungsten are 50 ppm by weight or less, respectively, and an average grain size of tungsten crystal is more than 100 μm, and a relative density is 99.3% or more.
(canceled)
A method for manufacturing a tungsten sputtering target in which tungsten powder is formed by a hot pressing (HP) method and then densified by a rolling method, wherein
- a temperature in the rolling method is 1200° C. or more and 1700° C. or less, and a total rolling reduction is 15% or more and 25% or less.
Dependencies are inferred from the claim text.