Light emitting diode element, method of manufacturing light emitting diode element, and display panel including light emitting diode element

A display panel comprising:

• a plurality of LED elements;
• and
• a driving circuit configured to drive the plurality of LED elements,
• wherein the plurality of LED elements comprises a first LED element,
• the first LED element comprises:
• a first light emitting cell comprising a first light emitting layer;
• a first tunnel junction layer formed above the first light emitting cell;
• a second light emitting cell formed on a surface of the first tunnel junction layer opposite to the first light emitting cell, the second light emitting cell comprising a second light emitting layer;
• a first electrode electrically connected to the first light emitting cell;
• and
• a second electrode electrically connected to the second light emitting cell,
• the first light emitting cell is electrically connected to the second light emitting cell through the first tunnel junction layer, and
• the first LED element is a flip-chip type LED element in which the first electrode and the second electrode are arranged toward a surface of the first LED element opposite to a light emitting surface of the first LED element.

A method of manufacturing an LED element, comprising:

• sequentially stacking a first n-type semiconductor layer, a first light emitting layer, and a first p-type semiconductor layer;
• stacking a tunnel junction layer on a surface of the first p-type semiconductor layer opposite to the first light emitting layer;
• sequentially stacking a second n-type semiconductor layer, a second light emitting layer, and a second p-type semiconductor layer on a surface of the tunnel junction layer opposite the first p-type semiconductor layer;
• and
• forming a first electrode and a second electrode at a location removed from a light emitting surface of the LED element, the first electrode and the second electrode being electrically connected to the first n-type semiconductor layer and the second p-type semiconductor layer, respectively.