Light-emitting diode and method for manufacturing the same

A light-emitting diode, comprising:

• a light-emitting epitaxial layered unit which includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer sandwiched between said first and second semiconductor layers, and which has a top surface including a first electrode region and a second electrode region which includes a pad area and an extension area, said light-emitting epitaxial layered unit having a plurality of vias, each of which extends downwardly from said extension area of said second electrode region through said first semiconductor layer and said light-emitting layer to terminate at a bottom surface in said second semiconductor layer so as to permit said second semiconductor layer to be exposed;
• an insulation layer disposed on said pad area and said extension area of said second electrode region;
• a transparent conductive layer disposed on said first semiconductor layer and having a plurality of holes which are in positions corresponding to those of said vias, respectively;
• a protective layer disposed on said transparent conductive layer and extending downwardly along an inner peripheral surface of each of said vias to terminate at said bottom surface of each of said vias to permit said second semiconductor layer to be exposed;
• a first electrode disposed on said protective layer and at said first electrode region, and electrically connected to said transparent conductive layer;
• and
• a second electrode disposed on said protective layer and at said second electrode region, and filling said vias so as to electrically connect said second semiconductor layer.

A method for manufacturing a light-emitting diode, comprising the steps of:

• a) providing a light-emitting epitaxial layered unit which includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer sandwiched between the first and second semiconductor layers, the light-emitting epitaxial layered unit having a top surface including a first electrode region which includes a pad area and an extension area;
• b) forming an insulation layer on the extension area of the first electrode region of the top surface of the light-emitting epitaxial layered unit;
• c) forming a transparent conductive layer on the insulation layer and the top surface of the light-emitting epitaxial layered unit;
• d) forming a protective layer on the transparent conductive layer, the protective layer being formed with a plurality of first holes above and along the extension area of the first electrode region to permit the transparent conductive layer to be exposed;
• and
• e) forming a first electrode on the protective layer, the first electrode filling the first holes so as to electrically connect the transparent conductive layer.