Schottky diode

A Schottky diode comprising:

• a first electrode;
• a second electrode;
• and
• a body of semiconductive material connected to the first electrode at a first interface and connected to the second electrode at a second interface,
• wherein
• the first interface comprises a first planar region lying in a first plane and the first electrode has a first projection onto the first plane in a first direction normal to the first plane,
• the second interface comprises a second planar region and the second electrode has a second projection onto the first plane in said first direction,
• said second projection lies entirely outside the first projection,
• one of the first interface and the second interface provides a Schottky contact,
• said body comprises a first side and a second side, said second side being spaced from the first side by a thickness of said body in said first direction, and
• said first planar region being on said first side of the body and said second planar region being on said second side of the body.

A Schottky diode comprising:

• a first electrode;
• a second electrode;
• and
• a body of semiconductive material connected to the first electrode at a first interface and connected to the second electrode at a second interface,
• wherein
• the first interface comprises a first planar region lying in a first plane and the first electrode has a first projection onto the first plane in a first direction normal to the first plane,
• the second interface comprises a second planar region and the second electrode has a second projection onto the first plane in said first direction,
• said second projection lies entirely outside the first projection,
• one of the first interface and the second interface provides a Schottky contact,
• said first and second electrodes being formed on a substrate, and said body being formed over said electrodes and said substrate such that a portion of said body covers a portion of the substrate between said electrodes and further portions of said body at least partially cover said first and second electrodes.

A diode in accordance with any preceding claim, wherein the first electrode comprises a material selected from a list comprising:

• a metal such as Au, Ti, Al, Mo, Pt, Pd, Ag, Cu, Ni, Cr, Ta, W;
• a metal alloy such as MoNi, MoCr, AlSi;
• a transparent conductive oxide (such as ITO, IZO, AZO);
• a metal nitride such as TiN;
• a carbon material such as carbon black, carbon nanotubes, graphene;
• a conducting polymer such as polyaniline, PEDOT:PSS;
• or a semiconductor material.

A diode in accordance with any preceding claim, wherein the second electrode comprises a material selected from a list comprising:

• a metal such as Au, Ti, Al, Mo, Pt, Pd, Ag, Cu, Ni, Cr, Ta, W;
• a metal alloy such as MoNi, MoCr, AlSi;
• a transparent conductive oxide (such as ITO, IZO, AZO);
• a metal nitride such as TiN;
• a carbon material such as carbon black, carbon nanotubes, graphene;
• a conducting polymer such as polyaniline, PEDOT:PSS;
• or a semiconductor material.

A diode in accordance with any preceding claim, wherein the semiconductive material is selected from a list comprising:

• compound semiconductors (such as GaAs, GaN, InP, CdSe, InGaAs, InGaAsSb), metal oxides such as ZnO, SnO2, NiO, SnO, Cu2O, In2O3, LiZnO, ZnSnO, InSnO (ITO), InZnO (IZO), HfInZnO (HIZO), InGaZnO (IGZO);
• metal oxynitrides, e.g. ZnxOyNz;
• inorganic semiconductors (such as amorphous, microcrystalline or nanocrystalline Si);
• organic semiconductors (such as CuPc, pentacene, PTCDA, methylene blue, Orange G, rubrene);
• polymer semiconductors (such as PEDOT:PSS, POT, P3OT, P3HT, polyaniline, polycarbazole);
• 2D materials (such as graphene);
• chalcogenides such as MoS2, GeSbTe;
• and perovskites (SrTiO3, CH3NH3PbCl3, H2NCHNH2PbCl3, CsSnI3);
• any of the preceding semiconductor materials, also doped or containing a doping gradient, and either n-type or p-type.

A method of manufacturing a Schottky diode comprising a first electrode, a second electrode, and a body of semiconductive material connecting the first and second electrodes, the method comprising:

• forming a first electrode on a first region of a substrate (or support) surface;
• forming a body of dielectric material covering at least a second region of the substrate surface adjacent the first region;
• forming a body of semiconductive material comprising a first portion, arranged over the first electrode and connected to the first electrode at a first interface, and a second portion arranged over a portion of the body of dielectric material covering said second region of the substrate surface;
• and
• forming a second electrode on said second portion of the body of semiconductive material, the second electrode being connected to the body of semiconductive material at a second interface.

A method of manufacturing a Schottky diode comprising a first electrode, a second electrode, and a body of semiconductive material connecting the first and second electrodes, the method comprising:

• forming a first electrode on a first region of a substrate (or support) surface;
• forming a body of semiconductive material comprising a first portion, arranged over the first electrode and connected to the first electrode at a first interface, and a second portion arranged over a second region of the substrate surface adjacent the first region;
• and
• forming a second electrode on said second portion of the body of semiconductive material, the second electrode being connected to the body of semiconductive material at a second interface.

A Schottky diode comprising:

• a first electrode;
• a second electrode;
• and
• a body of semiconductive material connected to the first electrode at a first interface and connected to the second electrode at a second interface,
• wherein the first interface provides a Schottky contact, the first electrode comprises a body (e.g. layer) of titanium and a layer comprising, or consisting of, at least one titanium oxide or suboxide formed on a surface of said body of titanium, and said first interface comprises or consists of an interface between the body of semiconductive material and said layer comprising, or consisting of, at least one titanium oxide or suboxide.