TRENCH-GATE INSULATED-GATE BIPOLAR TRANSISTORS (IGBTs) AND METHODS OF MANUFACTURE

A method comprising:

• implanting, in a substrate, a termination implant of an insulated-gate bipolar transistor (IGBT) device, the termination implant being included in an inactive region of the IGBT device, the inactive region at least partially surrounding an active region of the IGBT device;
• etching a trench in the substrate, the trench extending along a longitudinal axis in the active region of the IGBT device, the trench having:
• a first sidewall included in a first mesa disposed in the active region of the IGBT device;
• and
• a second sidewall included in a second mesa disposed in the active region of the IGBT device, the first mesa and the second mesa being parallel with the trench;
• forming, in at least a portion of the first mesa in the active region of the IGBT device, an active segment of the IGBT device, the forming the active segment including:
• implanting, in the at least a portion of the first mesa, an implant of a first conductivity type to form a well region;
• and
• implanting, in the well region, an emitter implant of a second conductivity type, the second conductivity type being opposite the first conductivity type;
• and
• forming, in at least a portion of the second mesa in the active region of the IGBT device, an inactive segment of the IGBT device, the forming the inactive segment including:
• etching substrate to form a plurality a semiconductor fingers along the second sidewall;
• and
• oxidizing the plurality of semiconductor fingers to form a dielectric material, the dielectric material defining the inactive segment.

A method comprising:

• implanting, in a substrate, a termination implant of an insulated-gate bipolar transistor (IGBT) device, the termination implant being included in an inactive region of the IGBT device, the inactive region at least partially surrounding an active region of the IGBT device;
• etching a trench in the substrate, the trench extending along a longitudinal axis in the active region of the IGBT device, the trench having:
• a first sidewall included in a first mesa disposed in the active region of the IGBT device;
• and
• a second sidewall included in a second mesa disposed in the active region of the IGBT device, the first mesa and the second mesa being parallel with the trench;
• forming, in at least a portion of the first mesa in the active region of the IGBT device, an active segment of the IGBT device, the forming the active segment including:
• implanting, in the at least a portion of the first mesa, an implant of a first conductivity type to form a well region;
• and
• implanting, in the well region, an emitter implant of a second conductivity type, the second conductivity type being opposite the first conductivity type;
• and
• forming, in at least a portion of the second mesa in the active region of the IGBT device, an inactive segment of the IGBT device, the forming the inactive segment including:
• removing the at least a portion of the second mesa;
• and
• replacing the at least a portion of the second mesa with a dielectric material.