Semiconductor structure with metal containing layer

A semiconductor structure, comprising:

• a substrate;
• a gate structure formed over the substrate;
• a mask structure formed over the gate structure;
• a source/drain structure formed adjacent to the gate structure in the substrate;
• a contact formed over the source/drain structure;
• a metal-containing layer formed over the contact;
• a first conductive structure formed through the metal-containing layer over the contact,
• wherein the mask structure is thicker than the metal-containing layer.

A semiconductor structure, comprising:

• a substrate;
• a gate structure formed over the substrate;
• a mask structure formed over the gate structure, wherein a top portion of the mask structure is wider than a bottom portion of the mask structure;
• a first source/drain structure formed at a first side of the gate structure;
• a first contact formed over the first source/drain structure;
• a first metal-containing layer formed over the first contact;
• and
• a spacer sandwiched between the first contact and the gate structure,
• wherein the top portion of the mask structure is in direct contact with the first metal-containing layer and a portion of the spacer is sandwiched between the bottom portion of the mask structure and the first contact.