Thin film transistors having alloying source or drain metals

An integrated circuit structure, comprising:

• an insulator structure above a substrate, the insulator structure having a topography that varies along a plane parallel with a global plane of the substrate;
• a semiconducting oxide material on the insulator structure, the semiconducting oxide material conformal with the topography of the insulator structure;
• a gate electrode over a first portion of the semiconducting oxide material on the insulator structure, the gate electrode having a first side opposite a second side;
• a first conductive contact adjacent the first side of the gate electrode, the first conductive contact over a second portion of the semiconducting oxide material on the insulator structure;
• and
• a second conductive contact adjacent the second side of the gate electrode, the second conductive contact over a third portion of the semiconducting oxide material on the insulator structure, wherein the first and second conductive contacts comprise a metal species, and the metal species is in the second and third portions of the semiconducting oxide material but not in the first portion of the semiconducting oxide material.

An integrated circuit structure, comprising:

• an insulator structure above a substrate, the insulator structure having a trench therein, the trench having sidewalls and a bottom;
• a semiconducting oxide material in the trench in the insulator structure, the semiconducting oxide material conformal with the sidewalls and bottom of the trench;
• a gate dielectric layer on the semiconducting oxide material in the trench, the gate dielectric layer conformal with the semiconducting oxide material conformal with the sidewalls and bottom of the trench;
• a gate electrode on the gate dielectric layer in the trench, the gate electrode having a first side opposite a second side and having an exposed top surface;
• a first conductive contact laterally adjacent the first side of the gate electrode, the first conductive contact on a first portion of the semiconducting oxide material conformal with the sidewalls of the trench;
• and
• a second conductive contact laterally adjacent the second side of the gate electrode, the second conductive contact on a second portion of the semiconducting oxide material conformal with the sidewalls of the trench, wherein the first and second conductive contacts comprise a metal species, and the metal species is in the first and second portions of the semiconducting oxide material but not in a region of the semiconducting oxide material beneath the gate electrode.