Insulated Gate Bipolar Transistor Device Having a Fin Structure

A semiconductor device, comprising:

• a semiconductor substrate comprising a drift region of an insulated gate bipolar transistor structure, the drift region having a first conductivity type and being coupled to a collector electrode;
• at least one basic cell comprising:
• a first fin structure extending between the drift region and an emitter metal structure of the insulated gate bipolar transistor structure and comprising a region of the first conductivity type connected to the emitter metal structure;
• a first gate structure of the insulated gate bipolar transistor structure extending along at least a part of the first fin structure and configured to receive a first voltage from a gate voltage source module and to control an on-state and an off-state of the insulated gate bipolar transistor structure;
• a second fin structure extending between the drift region and the emitter metal structure and comprising a part of a second conductivity type connected to the emitter metal structure of the insulated gate bipolar transistor structure;
• and
• a second gate structure of the insulated gate bipolar transistor structure extending along at least a part of the second fin structure and configured to receive a second voltage from a gate voltage source module and to control the current flow of the second charge carrier type in the second fin structure,
• wherein the second gate structure and the second fin structure are configured to nearly completely suppress conduction of carriers of a second charge carrier type in the on-state of the insulated gate bipolar transistor structure and to allow conduction of carriers of the second charge carrier type during the turn-off state of the insulated gate bipolar transistor structure,
• wherein a current strength of a current through the first fin structure caused by charge carriers of a first charge carrier type is at least 10 times larger than a current through the first fin structure caused by charge carriers of the second charge carrier type in the on-state of the insulated gate bipolar transistor structure.