Imaging device with uniform photosensitvie region array

An image sensor, comprising:

• a pixel well region disposed within a substrate and comprising a first pair of photodetectors neighboring a second pair of photodetectors, wherein the first and second pair of photodetectors are each configured to convert radiation that enters the substrate into an electrical signal;
• a first plurality of semiconductor devices overlying a front-side of the substrate and laterally adjacent to the first pair of photodetectors, wherein the first plurality of semiconductor devices is configured to receive the electrical signal from the first pair of photodetectors;
• a second plurality of semiconductor devices overlying the front-side of the substrate and laterally adjacent to the second pair of photodetectors, wherein the second plurality of semiconductor devices is configured to receive the electrical signal from the second pair of photodetectors;
• and
• wherein the first and second plurality of semiconductor devices are spaced on opposing sides of the pixel well region, and wherein the first plurality of semiconductor devices is electrically coupled in parallel with the second plurality of semiconductor devices.

A method for forming an image sensor, the method comprising:

• forming a doped well region having a first doping type in a substrate;
• forming a plurality of photodetectors having a second doping type different than the first doping type in the doped well region;
• forming a first plurality of semiconductor devices laterally adjacent to a first sidewall of the doped well region;
• forming a second plurality of semiconductor devices laterally adjacent to a second sidewall of the doped well region;
• and
• wherein the first sidewall of the doped well region is opposite the second sidewall of the doped well region, wherein the plurality of photodetectors are spaced laterally between the first and second plurality of semiconductor devices.