US 2020/0350302 A1 · SEAL RING STRUCTURES AND METHODS OF FORMING SAME

Abstract

Some embodiments relate to a three-dimensional (3D) integrated circuit (IC). The 3D IC includes a first IC die comprising a first semiconductor substrate, and a first interconnect structure over the first semiconductor substrate. The 3D IC also includes a second IC die comprising a second semiconductor substrate, and a second interconnect structure that separates the second semiconductor substrate from the first interconnect structure. A seal ring structure separates the first interconnect structure from the second interconnect structure and perimetrically surrounds a gas reservoir between the first IC die and second IC die. The seal ring structure includes a sidewall gas-vent opening structure configured to allow gas to pass between the gas reservoir and an ambient environment surrounding the 3D IC.

Claims20

Dependent claims

A semiconductor device comprising:

a first semiconductor die;
a second semiconductor die spaced over the first semiconductor die;
and
a ring-shaped sealing structure arranged between the first semiconductor die and the second semiconductor die, the ring-shaped sealing structure extending along an outer perimeter of the first semiconductor die and laterally surrounding a gas reservoir, the gas reservoir defined between the first semiconductor die and the second semiconductor die and laterally bounded by outer perimeter of the first semiconductor die, and wherein the ring-shaped sealing structure includes a sidewall gas-vent opening structure therein;
and
a material disposed in the sidewall gas-vent opening structure, the material configured to hermetically seal the gas reservoir from an ambient environment surrounding the semiconductor device.

3 more elements

Dependencies are inferred from the claim text.

Seal ring structures and methods of forming same

Life of this patent

Seal ring structures and methods of forming same

Life of this patent

Abstract

Claims20