Interconnect structure including graphene-metal barrier and method of manufacturing the same
AssigneesSamsung Electronics Co., Ltd., Seoul National University R&Db Foundation
InventorsKeunwook SHIN, Kibum KIM, Hyunmi KIM, Hyeonjin SHIN, Sanghun LEE
Life of this patent
Estimating the term…
Abstract
An interconnect structure may include a graphene-metal barrier on a substrate and a conductive layer on the graphene-metal barrier. The graphene-metal barrier may include a plurality of graphene layers and metal particles on grain boundaries of each graphene layer between the plurality of graphene layers. The metal particles may be formed at a ratio of 1 atom % to 10 atom % with respect to carbon of the plurality of graphene layers.
Claims28
An interconnect structure comprising:
- a substrate;
- a graphene-metal barrier on the substrate, the graphene-metal barrier including a plurality of graphene layers and metal particles on a grain boundary of each of the plurality of graphene layers and between the plurality of graphene layers;
- and
- a conductive layer on the graphene-metal barrier.
A method of manufacturing an interconnect structure including a graphene-metal barrier, the method comprising:
- forming the graphene-metal barrier on a substrate, the forming the graphene-metal barrier including supplying a hydrocarbon gas and a metal precursor to the substrate, the graphene-metal barrier including a plurality of graphene layers and metal particles on a grain boundary of each of the plurality of graphene layers and between the plurality of graphene layers;
- and
- forming a conductive layer on the graphene-metal barrier.
An interconnect structure comprising:
- a substrate;
- a conductive layer on the substrate;
- and
- a graphene-metal barrier between the conductive layer and the substrate, the graphene-metal barrier including a plurality of graphene layers arranged on each other and metal particles, each of the plurality of graphene layers including grains separated by grain boundaries, and
- a first portion of the metal particles being on or in corresponding grain boundaries among the grain boundaries of at least two of the plurality of graphene layers.
Dependencies are inferred from the claim text.