Semiconductor device and method for manufacturing the same, and electronic apparatus

A method for manufacturing a semiconductor device,

• the method comprising:
• forming a first film on an upper surface of a wiring layer in which a metallic film is formed, the first film serving as a diffusion preventing film that prevents diffusion of the metallic film;
• forming a large number of holes in the first film;
• forming an air gap in the wiring layer below the large number of holes, the air gap having a greater opening width than an opening width of the holes;
• and
• forming a second film on an inner peripheral surface of the air gap, and burying the second film in the large number of holes.

An electronic apparatus comprising

• a semiconductor device including
• a first wiring layer and a second wiring layer including a metallic film, the first wiring layer and the second wiring layer being stacked via a diffusion preventing film that prevents diffusion of the metallic film, wherein
• the diffusion preventing film includes a first film, and a second film buried in a large number of holes formed in the first film,
• at least the first wiring layer includes an air gap, and a protective film formed with the second film on an inner peripheral surface of the air gap, and
• an opening width of the air gap is equal to an opening width of the holes formed in the first film, or is greater than the opening width of the holes.